A new memristor based on NiTi smart alloys

Evripides Kyriakides; Constantinos Hadjistassou; Julius Georgiou

doi:10.1109/ISCAS.2012.6271506

A new memristor based on NiTi smart alloys

Evripides Kyriakides, Constantinos Hadjistassou, Julius Georgiou

Department of Engineering

University of Cyprus

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

With the recent discovery of the memristor, and following the initial realization based on titanium dioxide (TiO ₂), a plethora of potential device implementations have emerged. In this paper we present a novel memristive device based on a nickel titanium (NiTi) smart alloy. The proposed memristors are very practical in that it is possible to add a smart metal layer on an existing semiconductor process with very few extra masks. By patterning different widths and lengths of these memristors, the designer can affect the properties of the memristor. Unlike memristors designed for memory storage applications, these devices can return to their original state over shorter time scales, thus lending themselves to dynamic neural processes, which are key components required for future biomimetic computer architectures.

Original language	English
Title of host publication	ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems
Pages	1403-1406
Number of pages	4
DOIs	https://doi.org/10.1109/ISCAS.2012.6271506
Publication status	Published - 2012
Event	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 - Seoul, Korea, Republic of Duration: 20 May 2012 → 23 May 2012

Other

Other	2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012
Country/Territory	Korea, Republic of
City	Seoul
Period	20/05/12 → 23/05/12

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10.1109/ISCAS.2012.6271506

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title = "A new memristor based on NiTi smart alloys",

abstract = "With the recent discovery of the memristor, and following the initial realization based on titanium dioxide (TiO 2), a plethora of potential device implementations have emerged. In this paper we present a novel memristive device based on a nickel titanium (NiTi) smart alloy. The proposed memristors are very practical in that it is possible to add a smart metal layer on an existing semiconductor process with very few extra masks. By patterning different widths and lengths of these memristors, the designer can affect the properties of the memristor. Unlike memristors designed for memory storage applications, these devices can return to their original state over shorter time scales, thus lending themselves to dynamic neural processes, which are key components required for future biomimetic computer architectures.",

author = "Evripides Kyriakides and Constantinos Hadjistassou and Julius Georgiou",

year = "2012",

doi = "10.1109/ISCAS.2012.6271506",

language = "English",

pages = "1403--1406",

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note = "2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012 ; Conference date: 20-05-2012 Through 23-05-2012",

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AU - Hadjistassou, Constantinos

AU - Georgiou, Julius

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N2 - With the recent discovery of the memristor, and following the initial realization based on titanium dioxide (TiO 2), a plethora of potential device implementations have emerged. In this paper we present a novel memristive device based on a nickel titanium (NiTi) smart alloy. The proposed memristors are very practical in that it is possible to add a smart metal layer on an existing semiconductor process with very few extra masks. By patterning different widths and lengths of these memristors, the designer can affect the properties of the memristor. Unlike memristors designed for memory storage applications, these devices can return to their original state over shorter time scales, thus lending themselves to dynamic neural processes, which are key components required for future biomimetic computer architectures.

AB - With the recent discovery of the memristor, and following the initial realization based on titanium dioxide (TiO 2), a plethora of potential device implementations have emerged. In this paper we present a novel memristive device based on a nickel titanium (NiTi) smart alloy. The proposed memristors are very practical in that it is possible to add a smart metal layer on an existing semiconductor process with very few extra masks. By patterning different widths and lengths of these memristors, the designer can affect the properties of the memristor. Unlike memristors designed for memory storage applications, these devices can return to their original state over shorter time scales, thus lending themselves to dynamic neural processes, which are key components required for future biomimetic computer architectures.

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DO - 10.1109/ISCAS.2012.6271506

M3 - Conference contribution

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BT - ISCAS 2012 - 2012 IEEE International Symposium on Circuits and Systems

T2 - 2012 IEEE International Symposium on Circuits and Systems, ISCAS 2012

Y2 - 20 May 2012 through 23 May 2012

ER -

A new memristor based on NiTi smart alloys

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