@inproceedings{1f20c2aed1db4978a103cf96db368d5c,
title = "A numerical study of the effect of thermal relaxation on the photothermal signal from semiconductors",
abstract = "Photothermal radiometry (PTR) is a non-contact and non-destructive technique for material characterization. It is based on the detection of the infrared radiation (IR) emitted from a material excited by an intensity modulated light beam, which is partly absorbed in the material. The detected signal is due to the induced thermal field in the material, as well as the free-carrier concentration field, in the case of a semiconductor. The coupled one-dimensional diffusion equations for the free carriers and heat excursion are presented and solved, using the Maxwell-Cattaneo model for heat transport. The PTR signal amplitude and phase for the case of a typical semiconductor is calculated. It is found that in the case of crystalline material the signature of the relaxation time in the PTR signal is masked by the contribution of free carriers. For high values of surface recombination velocity, corresponding to significant crystal damage due to ion implantation, the PTR signal phase presents characteristic local minima which are well correlated with the relaxation time. Our numerical results show that PTR is a promising technique for the evaluation of the thermal relaxation times in heavily damaged semiconducting materials.",
author = "M. Nestoros and Papanicolaou, {N. C.}",
note = "Publisher Copyright: {\textcopyright} 2023 Author(s).; 14th International Hybrid Conference for Promoting the Application of Mathematics in Technical and Natural Sciences, AMiTaNS 2022 ; Conference date: 22-06-2022 Through 27-06-2022",
year = "2023",
month = nov,
day = "20",
doi = "10.1063/5.0177535",
language = "English",
series = "AIP Conference Proceedings",
publisher = "American Institute of Physics Inc.",
number = "1",
editor = "Todorov, {Michail D.}",
booktitle = "AIP Conference Proceedings",
edition = "1",
}