A photothermal microscopy investigation of carrier transport in ion implanted silicon thin films under the action of external electric field

M. Nestoros, M. Mourouti, N. C. Papanicolaou, C. Christofides

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A series of ion implanted Si thin film pseudo-devices with various dimensions in the micrometer region was investigated for different values and orientations of an applied external electric field, utilizing photothermal microscopy. The important features of the photothermal signal namely its linearity as a function of the applied electric field as well as the saturation effect are discussed and an one dimensional model is used for a qualitative interpretation of the results. Photothermal microscopy is proved to be a sensitive technique for carrier transport monitoring in microelectronic circuit elements.

Original languageEnglish
Pages (from-to)505-509
Number of pages5
JournalOptoelectronics and Advanced Materials, Rapid Communications
Volume5
Issue number5
Publication statusPublished - May 2011

Keywords

  • Carrier transport
  • Implanted silicon thin films
  • Photothermal microscopy

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