Abstract
A series of ion implanted Si thin film pseudo-devices with various dimensions in the micrometer region was investigated for different values and orientations of an applied external electric field, utilizing photothermal microscopy. The important features of the photothermal signal namely its linearity as a function of the applied electric field as well as the saturation effect are discussed and an one dimensional model is used for a qualitative interpretation of the results. Photothermal microscopy is proved to be a sensitive technique for carrier transport monitoring in microelectronic circuit elements.
| Original language | English |
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| Pages (from-to) | 505-509 |
| Number of pages | 5 |
| Journal | Optoelectronics and Advanced Materials, Rapid Communications |
| Volume | 5 |
| Issue number | 5 |
| Publication status | Published - May 2011 |
Keywords
- Carrier transport
- Implanted silicon thin films
- Photothermal microscopy