Dispersive effects of a thin metal-insulating layer in MMIC structures

Anastasis C. Polycarpou; Michael R. Lyons; Constantine A. Balanis

Dispersive effects of a thin metal-insulating layer in MMIC structures

Anastasis C. Polycarpou, Michael R. Lyons, Constantine A. Balanis

Department of Engineering

Arizona State University

Research output: Contribution to journal › Article › peer-review

Abstract

A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

Original language	English
Pages (from-to)	303-306
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
Volume	1
Publication status	Published - 1996

Cite this

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title = "Dispersive effects of a thin metal-insulating layer in MMIC structures",

abstract = "A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.",

author = "Polycarpou, {Anastasis C.} and Lyons, {Michael R.} and Balanis, {Constantine A.}",

year = "1996",

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AU - Polycarpou, Anastasis C.

AU - Lyons, Michael R.

AU - Balanis, Constantine A.

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N2 - A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

AB - A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.

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M3 - Article

AN - SCOPUS:0029702067

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JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

ER -

Dispersive effects of a thin metal-insulating layer in MMIC structures

Abstract

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