Abstract
A full-wave finite element analysis is used to examine the dispersive effects of a thin metal-insulating layer in CPW and microstrip MMICs. This layer is often encountered in the MMIC manufacturing process residing on top of a semiconducting substrate. The effects of metallization thickness are also examined.
| Original language | English |
|---|---|
| Pages (from-to) | 303-306 |
| Number of pages | 4 |
| Journal | IEEE MTT-S International Microwave Symposium Digest |
| Volume | 1 |
| Publication status | Published - 1996 |