Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors

Y. Karmiotis; M. Nestoros; C. Christofides

doi:10.1063/1.120848

Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors

Y. Karmiotis, M. Nestoros, C. Christofides

Department of Engineering

University of Cyprus

Research output: Contribution to journal › Review article › peer-review

Abstract

A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists.

Original language	English
Pages (from-to)	695-697
Number of pages	3
Journal	Applied Physics Letters
Volume	72
Issue number	6
DOIs	https://doi.org/10.1063/1.120848
Publication status	Published - 1998

Access to Document

10.1063/1.120848

Cite this

@article{5a2eba852ebc44b18a85c9990d482526,

title = "Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors",

abstract = "A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists.",

author = "Y. Karmiotis and M. Nestoros and C. Christofides",

year = "1998",

doi = "10.1063/1.120848",

language = "English",

volume = "72",

pages = "695--697",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors

AU - Karmiotis, Y.

AU - Nestoros, M.

AU - Christofides, C.

PY - 1998

Y1 - 1998

N2 - A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists.

AB - A comparative computational study of the finite thickness and semi-infinite photothermal radiometric model is carried out for silicon, germanium, and gallium arsenide. The sensitivity of the photothermal radiometric finite thickness model towards the existence of very thin amorphous layers on crystalline substrates is also explored. This study can be used as an important guide for experimentalists.

UR - http://www.scopus.com/inward/record.url?scp=0032498468&partnerID=8YFLogxK

U2 - 10.1063/1.120848

DO - 10.1063/1.120848

M3 - Review article

AN - SCOPUS:0032498468

SN - 0003-6951

VL - 72

SP - 695

EP - 697

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 6

ER -

Finite thickness and semi-infinite photothermal radiometric models for the characterization of semiconductors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this