Photothermal reflection signal versus temperature: Study of implanted Si wafers

Marios Nestoros; Benoît C. Forget; Antonis Seas; Constantinos Christofides

Photothermal reflection signal versus temperature: Study of implanted Si wafers

Marios Nestoros, Benoît C. Forget, Antonis Seas, Constantinos Christofides

Department of Engineering

University of Cyprus

Research output: Contribution to journal › Article › peer-review

Abstract

A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.

Original language	English
Journal	Progress in Natural Science
Volume	6
Issue number	SPEC. ISS.
Publication status	Published - 1996

Cite this

@article{55432edd69014369a060b764982508c1,

title = "Photothermal reflection signal versus temperature: Study of implanted Si wafers",

abstract = "A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.",

author = "Marios Nestoros and Forget, {Beno{\^i}t C.} and Antonis Seas and Constantinos Christofides",

year = "1996",

language = "English",

volume = "6",

journal = "Progress in Natural Science",

issn = "1002-0071",

publisher = "Chinese Materials Research Society",

number = "SPEC. ISS.",

}

TY - JOUR

T1 - Photothermal reflection signal versus temperature

T2 - Study of implanted Si wafers

AU - Nestoros, Marios

AU - Forget, Benoît C.

AU - Seas, Antonis

AU - Christofides, Constantinos

PY - 1996

Y1 - 1996

N2 - A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.

AB - A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.

UR - http://www.scopus.com/inward/record.url?scp=20544472559&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:20544472559

SN - 1002-0071

VL - 6

JO - Progress in Natural Science

JF - Progress in Natural Science

IS - SPEC. ISS.

ER -

Photothermal reflection signal versus temperature: Study of implanted Si wafers

Abstract

Other files and links

Fingerprint

Cite this