Photothermal reflection signal versus temperature: Study of implanted Si wafers

Marios Nestoros, Benoît C. Forget, Antonis Seas, Constantinos Christofides

Research output: Contribution to journalArticle

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Abstract

A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.

Original languageEnglish
JournalProgress in Natural Science
Volume6
Issue numberSPEC. ISS.
Publication statusPublished - 1996

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