Abstract
A quantitative analysis of the temperature dependence (40 to 300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a non-destructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.
| Original language | English |
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| Journal | Progress in Natural Science |
| Volume | 6 |
| Issue number | SPEC. ISS. |
| Publication status | Published - 1996 |