Abstract
A quantitative analysis of the temperature dependence (40-300 K) of the photothermal reflectance signal on crystalline and phosphorus implanted silicon wafers is presented. A theoretical model has been adapted for the interpretation of experimental results concerning photothermal measurements as a function of temperature. The quantitative analysis of the temperature dependence of the photothermal reflectance signal on crystalline and implanted silicon wafers at various doses led to a nondestructive evaluation of their optical, electronic, and thermal properties in a wide temperature range.
| Original language | English |
|---|---|
| Pages (from-to) | 14115-14123 |
| Number of pages | 9 |
| Journal | Physical Review B |
| Volume | 51 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 1995 |