Thermoelectronic-wave coupling in laser photothermal theory of semiconductors at elevated temperatures

Andreas Mandelis, Marios Nestoros, Constantinos Christofides

Research output: Contribution to journalArticlepeer-review


A quantitative analysis of linear temperature-dependent coupled thermoelectronic diffusion waves in the generation of the laser-induced IR photothermal radiometric signal from a photoexcited, plasmawave-dominated, semi-infinite semiconductor Si wafer is presented. The strong coupling between the (usually assumed decoupled) carrier and thermal wave transport equations is accounted for explicitly and the range of violation of the Vasil'ev-Sandomirskii condition is studied. Thermoelectronic coupling is found to degrade the sensitivity of the plasma-originating IR radiometric signal in high-quality process Si substrates at elevated background temperatures and high modulation frequencies, with the exception of highly degenerate plasmas.

Original languageEnglish
Pages (from-to)459-468
Number of pages10
JournalOptical Engineering
Issue number2
Publication statusPublished - Feb 1997


  • High temperatures
  • Laser photoexcitation
  • Photoacoustic and photothermal science and engineering
  • Semiconductors
  • Thermoelectronic wave


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